CVE-2018-11982

high

Description

In Snapdragon (Mobile, Wear) in version MDM9206, MDM9607, MDM9635M, MDM9640, MDM9645, MDM9655, MSM8909W, MSM8996AU, SD 210/SD 212/SD 205, SD 410/12, SD 425, SD 427, SD 430, SD 435, SD 450, SD 615/16/SD 415, SD 617, SD 625, SD 650/52, SD 810, SD 820, SD 835, Snapdragon_High_Med_2016, a double free of ASN1 heap memory used for EUTRA CAP container occurs during UTRAN to LTE Capability inquiry procedure.

References

https://www.qualcomm.com/company/product-security/bulletins

Details

Source: Mitre, NVD

Published: 2018-09-20

Updated: 2026-06-17

Risk Information

CVSS v2

Base Score: 8.3

Vector: CVSS2#AV:A/AC:L/Au:N/C:C/I:C/A:C

Severity: High

CVSS v3

Base Score: 8.8

Vector: CVSS:3.0/AV:A/AC:L/PR:N/UI:N/S:U/C:H/I:H/A:H

Severity: High

EPSS

EPSS: 0.00081